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this is information on a product in full production. may 2012 doc id 15421 rev 5 1/21 21 stb18NM80, stf18NM80, stp18NM80, stw18NM80 n-channel 800 v, 0.25 , 17 a, mdmesh? power mosfet in d2pak, to-220fp, to-220 and to-247 packages datasheet ? production data features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these n-channel power mosfets are developed using stmicroelectronics? revolutionary mdmesh? technology, which associates the multiple drain process with the company's powermesh? horizontal layout. these devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. utilizing st?s proprietary strip technique, these power mosfets boast an overall dynamic performance which is superior to similar products on the market. figure 1. internal schematic diagram order codes v dss r ds(on) max i d stb18NM80 800 v < 0.295 17 a stf18NM80 800 v < 0.295 17 a (1) 1. limited only by maximum temperature allowed stp18NM80 800 v < 0.295 17 a stw18NM80 800 v < 0.295 17 a to-220 d2pak to-247 1 2 3 1 2 3 to-220fp 1 3 1 2 3 !-v $ ' 3 table 1. device summary order codes marking package packaging stb18NM80 18NM80 d2pak tape and reel stf18NM80 to-220fp tube stp18NM80 to-220 stw18NM80 to-247 www.st.com
contents stb18NM80, stf18NM80, stp18NM80, stw18NM80 2/21 doc id 15421 rev 5 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
stb18NM80, stf18NM80, stp18NM80, stw18NM80 electrical ratings doc id 15421 rev 5 3/21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak to-247 to-220fp v ds drain-source voltage 800 v v gs gate-source voltage 30 v i d drain current (continuous) at t c = 25 c 17 17 (1) 1. limited only by maximum temperature allowed a i d drain current (continuous) at t c = 100 c 10.71 10.71 (1) a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 68 68 (1) a p tot total dissipation at t c = 25 c 190 40 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s;t c = 25 c) 2500 v t stg storage temperature -65 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d2pak to-247 to-220fp r thj-case thermal resistance junction-case 0.66 3.13 c/w r thj-amb thermal resistance junction-amb 62.5 50 62.5 c/w r thj-pcb thermal resistance junction-pcb 30 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i as avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 4a e as single pulse avalanche energy (starting tj = 25 c, i d = i as , v dd = 50 v) 600 mj
electrical characteristics stb18NM80, stf18NM80, stp18NM80, stw18NM80 4/21 doc id 15421 rev 5 2 electrical characteristics (t case = 25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v, v ds = 800 v,tc = 125 c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 30 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 8.5 a 0.25 0.295 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 8.5 a - 14 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 2070 210 29 - pf pf pf c oss eq. (2) 2. c oss eq . is defined as a constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v gs = 0, v ds = 0 to 640 v - 316 - pf r g gate input resistance f = 1 mhz gate dc bias = 0 test signal level = 20 mv open drain -4 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 640 v, i d = 17 a v gs = 10 v (see figure 17 ) - 70 13 40 - nc nc nc
stb18NM80, stf18NM80, stp18NM80, stw18NM80 electrical characteristics doc id 15421 rev 5 5/21 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 400 v, i d = 8.5 a, r g = 4.7 , v gs = 10 v (see figure 16 and figure 21 ) - 18 28 96 50 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 17 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 100 v, (see figure 18 ) - 618 9.6 31.2 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 100 v, tj=150c (see figure 18 ) - 822 13 31.8 ns c a
electrical characteristics stb18NM80, stf18NM80, stp18NM80, stw18NM80 6/21 doc id 15421 rev 5 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. safe operating area for to-220fp figure 7. thermal impedance for to-220fp i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 0.01
stb18NM80, stf18NM80, stp18NM80, stw18NM80 electrical characteristics doc id 15421 rev 5 7/21 figure 8. output characteristics figure 9. transfer characteristics figure 10. normalized b vdss vs temperature figure 11. static drain-source on-resistance figure 12. gate charge vs gate-source voltage figure 13. capacitance variations i d 20 10 0 0 10 v d s (v) 20 (a) 5 15 3 0 40 v g s =10v 5v 6v 7v 3 5 25 15 5 i d 20 10 5 0 0 4 v g s (v) 8 (a) 2 6 10 3 0 3 5 15 25 v d s =20v 40 bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.95 0.9 8 1.00 1.0 3 1.06 i d =1ma r d s (on) 0.22 0.2 0 10 i d (a) ( ) 5 15 0.24 0.2 8 v g s =10v 0.26 v g s 6 4 2 0 0 20 q g (nc) (v) 8 0 8 40 60 10 v dd =640v i d =17a 12 3 00 200 100 0 400 500 v d s v g s 600 700 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss 100000 1000
electrical characteristics stb18NM80, stf18NM80, stp18NM80, stw18NM80 8/21 doc id 15421 rev 5 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on-resistance vs temperature v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a r d s (on) 1.9 1. 3 0.7 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.9 1.1 1.5 1.7 2.1 i d = 8 .5a v g s =10v
stb18NM80, stf18NM80, stp18NM80, stw18NM80 test circuits doc id 15421 rev 5 9/21 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stb18NM80, stf18NM80, stp18NM80, stw18NM80 10/21 doc id 15421 rev 5 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
stb18NM80, stf18NM80, stp18NM80, stw18NM80 package mechanical data doc id 15421 rev 5 11/21 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data stb18NM80, stf18NM80, stp18NM80, stw18NM80 12/21 doc id 15421 rev 5 table 10. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stb18NM80, stf18NM80, stp18NM80, stw18NM80 package mechanical data doc id 15421 rev 5 13/21 figure 24. to-220fp drawing 7012510_rev_k_b
package mechanical data stb18NM80, stf18NM80, stp18NM80, stw18NM80 14/21 doc id 15421 rev 5 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stb18NM80, stf18NM80, stp18NM80, stw18NM80 package mechanical data doc id 15421 rev 5 15/21 figure 25. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stb18NM80, stf18NM80, stp18NM80, stw18NM80 16/21 doc id 15421 rev 5 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stb18NM80, stf18NM80, stp18NM80, stw18NM80 package mechanical data doc id 15421 rev 5 17/21 figure 26. to-247 drawing 0075 3 25_g
packaging mechanical data stb18NM80, stf18NM80, stp18NM80, stw18NM80 18/21 doc id 15421 rev 5 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
stb18NM80, stf18NM80, stp18NM80, stw18NM80 packaging mechanical data doc id 15421 rev 5 19/21 figure 27. tape figure 28. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2 a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
revision history stb18NM80, stf18NM80, stp18NM80, stw18NM80 20/21 doc id 15421 rev 5 6 revision history table 14. document revision history date revision changes 25-feb-2009 1 first release. 07-apr-2009 2 section 4: package mechanical data has been modified. 20-apr-2009 3 r ds(on) max value has been corrected. 09-sep-2009 4 document status promoted from preliminary data to datasheet. 25-may-2012 5 figure 12: gate charge vs gate-source voltage has been updated. minor text changes.
stb18NM80, stf18NM80, stp18NM80, stw18NM80 doc id 15421 rev 5 21/21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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